mriselMagnetic Resonance in SolidsMagnetic Resonance in Solids2072-5981Kazan Federal University10.26907/mrsej-24208mrisel-261Research ArticleСтатьиPhotoinduced EPR and ENDOR studies of the divacancies and nitrogen-vacancy defects in silicon carbideMurzakhanovF. F.

Kazan 420008

LatypovaL. R.

Harbin 150001

Zhengzhou 450000

larisa.latypova@hit.edu.cnMaminG. V.

Kazan 420008

SadovnikovaM. A.

Kazan 420008

Von BardelebenH. J.

Paris 75005

GafurovM. R.

Kazan 420008

Kazan Federal UniversityRussian FederationSchool of Chemistry and Chemical Engineering, Harbin Institute of Technology; Zhengzhou Research Institute, Harbin Institute of TechnologyChinaSorbonne Universit´e, Campus Pierre et Marie Curie, Institut des Nanosciences de ParisFrance202429082024262SPECIAL ISSUE dedicated to Boris Z. Malkin's 85th birthday24208 (10 pp.)Copyright © Murzakhanov F.F., Latypova L.R., Mamin G.V., Sadovnikova M.A., von Bardeleben H.J., Gafurov M.R., 20242024Murzakhanov F.F., Latypova L.R., Mamin G.V., Sadovnikova M.A., von Bardeleben H.J., Gafurov M.R.Murzakhanov F.F., Latypova L.R., Mamin G.V., Sadovnikova M.A., von Bardeleben H.J., Gafurov M.R.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://www.mrsej.ru/jour/article/view/261

Defects (color centers) in wide-gap semiconductors are considered as the basis for the realization of highly sensitive sensors, single-photon sources, and for the implementation of quantum technologies. Silicon carbide (SiC) crystal can serve as a reliable solid-state matrix for the range of high-spin (electron spin S = 1) color centers to become an alternative to the diamond with the widely-known nitrogen-vacancy (NV-) centers. This paper reviews the electron paramagnetic resonance (EPR) and electron-nuclear double resonance (ENDOR) studies of the divacancies (VV) and negatively charged NV- centers in different SiC polytypes. The main spin Hamiltonian components of non-equivalent spin defects in SiC are presented depending on their structural features (positions) and local environment: the zero-field splitting (D ≈ 1.3 GHz), hyperfine (A ≈ 1.1 MHz) and quadrupole (P ≈ 1.8 MHz) interaction values. The luminescence spectrum of the color center in SiC (λ = 1.1-1.25μm) in near-IR range is favorable for fiber-optic channels (O-band) and biological objects study, which brings these defects to a higher level of practical application.

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The authors declare that there are no conflicts of interest present.