mriselMagnetic Resonance in SolidsMagnetic Resonance in Solids2072-5981Kazan Federal Universitymrisel-206Research ArticleСтатьиSpin Relaxation of Electrons Localized on Shallow and Deep Donor Centers in Silicon with Different Isotopic CompositionGuseinovD. V.

Gagarin prospect 23, Nizhni Novgorod 603950

guseinov@phys.unn.ruEzhevskiiA. A.

Gagarin prospect 23, Nizhni Novgorod 603950

Nizhni Novgorod State UniversityRussian Federation200621012024814852Copyright © Guseinov D.V., Ezhevskii A.A., 20242024Guseinov D.V., Ezhevskii A.A.Guseinov D.V., Ezhevskii A.A.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://www.mrsej.ru/jour/article/view/206

The results of a numerical calculation of the contribution of ligand superhyperfine interactions to the line width for the phosphorus donor electron in silicon are reported and show linear behavior at lower concentrations compared to deep centers. The linear dependence for the phosphorus center in silicon predicts an electron spin-relaxation time for isotopically purified 28Si:P longer than expected on the basis of the common square-root law. The spin-lattice relaxation processes in chromium doped silicon samples enriched by 28Si isotope and with natural isotopic abundances were studied.

electron paramagnetic resonanceline widthhyperfine interactionsiliconparamagnetic centersisotopic enrichmenThis work was supported in part by RFBR, grant № 05-02-16449.ReferencesDe Sousa R., Das Sarma S. Phys. Rev. B 67, 033301 (2003).De Sousa R., Das Sarma S. Phys. Rev. B 67, 033301 (2003).Guseinov D.V., Ezhevskii A.A., Ammerlaan C.A.J. Physica B. 381, 164 (2006).Guseinov D.V., Ezhevskii A.A., Ammerlaan C.A.J. Physica B. 381, 164 (2006).Emtsev Jr. V.V., Ammerlaan C.A.J., Ezhevskii A.A., Gusev A.V. Physica B. 376, 45 (2006)Emtsev Jr. V.V., Ammerlaan C.A.J., Ezhevskii A.A., Gusev A.V. Physica B. 376, 45 (2006)Feher G. Phys. Rev. 114,1219 (1959).Feher G. Phys. Rev. 114,1219 (1959).Tyryshkin A.M., Lyon S.A., Astashkin A.V., Raitsimring A.M. Phys. Rev. B. 68, 193207 (2003).Tyryshkin A.M., Lyon S.A., Astashkin A.V., Raitsimring A.M. Phys. Rev. B. 68, 193207 (2003).Abragam A., Bleaney B. Electron paramagnetic resonance of transition ions. Oxford, Clarendon Press (1970).Abragam A., Bleaney B. Electron paramagnetic resonance of transition ions. Oxford, Clarendon Press (1970).Roufosse M., Klemens P.G. Phys.Rev.B. 7, 5379 (1973).Roufosse M., Klemens P.G. Phys.Rev.B. 7, 5379 (1973).

The authors declare that there are no conflicts of interest present.