mriselMagnetic Resonance in SolidsMagnetic Resonance in Solids2072-5981Kazan Federal Universitymrisel-170Research ArticleСтатьиTemperature dependence of the conduction electron g-factor in silicon: theory and experimentKonakovA. A.

Gagarin ave. 23, Nizhniy Novgorod 603950

anton.a.konakov@gmail.comEzhevskiiA. A.

Gagarin ave. 23, Nizhniy Novgorod 603950

SoukhorukovA. V.

Gagarin ave. 23, Nizhniy Novgorod 603950

GuseinovD. V.

Gagarin ave. 23, Nizhniy Novgorod 603950

PopkovS. A.

Gagarin ave. 23, Nizhniy Novgorod 603950

BurdovV. A.

Gagarin ave. 23, Nizhniy Novgorod 603950

University of Nizhniy NovgorodRussian Federation2011200120241321420Copyright © Konakov A.A., Ezhevskii A.A., Soukhorukov A.V., Guseinov D.V., Popkov S.A., Burdov V.A., 20242024Konakov A.A., Ezhevskii A.A., Soukhorukov A.V., Guseinov D.V., Popkov S.A., Burdov V.A.Konakov A.A., Ezhevskii A.A., Soukhorukov A.V., Guseinov D.V., Popkov S.A., Burdov V.A.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://www.mrsej.ru/jour/article/view/170

Temperature dependence of the conduction electron Lande g-factor in silicon has been investigated both theoretically and experimentally. Theoretical consideration is based on the renormalization of the electron energy in the magnetic field by the electron-phonon interaction in the second-order perturbation theory. Interaction with lattice vibrations decreases the conduction electron g-factor. The g-factor was measured in the electron spin resonance experiments for n-Si samples. In the high temperature limit the g-factor linearly decreases with temperature in good agreement with the experimental data.

g-factorelectron-phonon interactionspin fliprenormalizationtemperature dependenceconduction electron spin resonanceThe authors thank the “Dynasty” Foundation, RFBR, and the Russian Ministry of Education and Science who financially supported the work through the project RNP 2.1.1/10875, and contracts No 07.514.11.4012 and No 16.740.11.0202.ReferencesAppelbaum I., Huang B., Monsma D.J. Nature (London) 447, 295 (2007)Appelbaum I., Huang B., Monsma D.J. Nature (London) 447, 295 (2007)Elliott R.J. Phys. Rev. 96, 266 (1954)Elliott R.J. Phys. Rev. 96, 266 (1954)Yafet Y. in Solid State Physics, edited by F. Seitz and D. Turnbull (Academic, New York, 1963), Vol. 14, p. 1Yafet Y. in Solid State Physics, edited by F. Seitz and D. Turnbull (Academic, New York, 1963), Vol. 14, p. 1Cheng J.L., Wu M.W., Fabian J. Phys. Rev. Lett. 104, 016601 (2010)Cheng J.L., Wu M.W., Fabian J. Phys. Rev. Lett. 104, 016601 (2010)Wilson D.K., Feher G. Phys. Rev. 124, 1068 (1961)Wilson D.K., Feher G. Phys. Rev. 124, 1068 (1961)Ezhevskii A.A., Soukhorukov A.V., Guseinov D.V., Popkov S.A., Gusev A.V., Gavva V.A. AIP Conf. Proc. 1399 (accepted for publication)Ezhevskii A.A., Soukhorukov A.V., Guseinov D.V., Popkov S.A., Gusev A.V., Gavva V.A. AIP Conf. Proc. 1399 (accepted for publication)Cardona M. Phys. Stat. Sol. (a) 188, 1209 (2001)Cardona M. Phys. Stat. Sol. (a) 188, 1209 (2001)Mahan G.D. Many-Particle Physics, Plenum Press, New York (1990)Mahan G.D. Many-Particle Physics, Plenum Press, New York (1990)Batyev E.G. Physics – Uspekhi 52, 1245 (2009)Batyev E.G. Physics – Uspekhi 52, 1245 (2009)Anselm A. Introduction to Semiconductor Theory, Prentice-Hall, Englewood Cliffs, NJ (1981)Anselm A. Introduction to Semiconductor Theory, Prentice-Hall, Englewood Cliffs, NJ (1981)Pop E., Dutton R.W., Goodson K.E. J. Appl. Phys. 96, 4998 (2004)Pop E., Dutton R.W., Goodson K.E. J. Appl. Phys. 96, 4998 (2004)

The authors declare that there are no conflicts of interest present.